Acceptor-related metastable defects in compensated n-type silicon
نویسندگان
چکیده
This paper reviews the theory of metastable defect formation in compensated n-type silicon. By means of minority carrier lifetime measurements before and after defect activation we investigate the impact of 3 potential metastable defects relevant to the solar industry: Iron-boron pairs, chromium-boron pairs and the boron-oxygen defect.
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